FEATURES•Halogen-free According to IEC 61249-2-21Definition•TrenchFET® Power MOSFET•100 % Rg Tested•Compliant to RoHS Directive 2002/95/ECPRODUCT SUMMARYVDS (V)RDS(on) (Ω)ID (A)200.025 at VGS = 4.5 V7.10.035 at VGS = 2.5 V6.0S1D1G1D1S2D2G2D2SO-85678Top View2341N-Channel MOSFETG1D1S1N-Channel MOSFETG2D2S2Notes:a. Surface Mounted on FR4 board, t≤ 10 s.ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise notedParameterSymbolLimitUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS± 12Continuous Drain Current (TJ = 150 °C)aTA = 25 °CID7.1ATA = 70 °C5.7Pulsed Drain Current (10 µs Pulse Width)IDM40Continuous Source Current (Diode Conduction)aIS1.7Maximum Power DissipationaTA = 25 °CPD2WTA = 70 °C1.3Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to 150°CTHERMAL RESISTANCE RATINGSParameterSymbolLimitUnitMaximum Junction-to-AmbientaRthJA62.5°C/WDual N-Channel 20-V (D-S) MOSFETE-mail：China@VBsemi TEL:86-755-83251052www.VBsemi.twTPC82071
