SSM3J56MFV2011-05-091TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)SSM3J56MFV○Load Switching Applications• 1.2 V drive• Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V)RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V)RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V)RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V)Absolute Maximum Ratings (Ta = 25°C)CharacteristicSymbolRatingUnitDrain-Source voltageVDSS-20VGate-Source voltageVGSS± 8VDCID (Note 1)-800Drain currentPulseIDP (Note 1)-1600mAPD (Note 2)150PD (Note 3)500Power dissipationt< 5s800mWChannel temperatureTch150°CStorage temperature rangeTstg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltageandthesignificantchangeintemperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within theabsolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Note 1: The channel temperature should not exceed 150°C during use.Note 2: Mounted on a FR4 board.(25.4 mm× 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2)Note 3: Mounted on a FR4 board.(25.4 mm× 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)MarkingEquivalent Circuit (top view)Handling PrecautionWhen handling individual devices that are not yet mounted on a circuit board, make sure that the environment isprotected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects thatcome into direct contact with devices should be made of antistatic materials.Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thicknessand pad area. When using this device, please take heat dissipation into consideration.Unit: mmJEDEC―JEITA―TOSHIBA2-1L1BWeight: 1.5mg (typ.)PW1231231.Gate2.Source3.DrainVESM
