SSM3J355R1MOSFETs Silicon P-Channel MOSSSM3J355RSSM3J355RSSM3J355RSSM3J355RStart of commercial production2016-111.1.1.1. ApplicationsApplicationsApplicationsApplications•Power Management Switches2.2.2.2. FeaturesFeaturesFeaturesFeatures(1)1.8 V drive(2)Low drain-source on-resistance: RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V)RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V)RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V)3.3.3.3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitSOT-23F1: Gate2: Source3: Drain2016-11-30Rev.1.0©2016 Toshiba Corporation
