SSM3J331R1MOSFETs Silicon P-Channel MOS (U-MOS)SSM3J331RSSM3J331RSSM3J331RSSM3J331RStart of commercial production2011-071.1.1.1. ApplicationsApplicationsApplicationsApplications•Power Management Switches2.2.2.2. FeaturesFeaturesFeaturesFeatures(1)1.5-V gate drive voltage.(2)Low drain-source on-resistance: RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V)RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V)RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V)RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V)3.3.3.3. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationSOT-23F1. Gate2. Source3. Drain2016-08-24Rev.5.0©2016 Toshiba Corporation
