PMXB360ENEA80 V, N-channel Trench MOSFET5 July 2018Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3(SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits• Logic-level compatible• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm• Tin-plated 100 % solderable side pads for optical solder inspection• ElectroStatic Discharge (ESD) protection > 2 kV HBM• AEC-Q101 qualified3. Applications• Relay driver• Power management in automotive and industrial applications• LED driver• DC-to-DC converter4. Quick reference dataTable 1. Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage--80VVGSgate-source voltageTj = 25 °C-20-20VIDdrain currentVGS = 10 V; Tamb = 25 °C[1]--1.1AStatic characteristicsRDSondrain-source on-stateresistanceVGS = 10 V; ID = 1.1 A; Tj = 25 °C-345450mΩ[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
