MP43032006-10-271TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type(Four Darlington Power Transistors in One)MP4303High Power Switching ApplicationsHammer Drive, Pulse Motor Drive and Inductive LoadSwitching• Small package by full molding (SIP 12 pins)• High collector power dissipation (4-device operation): PT = 4.4 W (Ta = 25°C)• High collector current: IC (DC) = 2 A (max)• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)Absolute Maximum Ratings (Ta = 25°C)CharacteristicsSymbolRatingUnitCollector-base voltageVCBO120VCollector-emitter voltageVCEO100VEmitter-base voltageVEBO6VDCIC2Collector currentPulseICP4AContinuous base currentIB0.5ACollector power dissipation(1 -evice operation)PC2.2WCollector power dissipation(4-device operation)PT4.4WJunction temperatureTj150°CStorage temperature rangeTstg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly evenif the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximumratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).Array ConfigurationIndustrial ApplicationsUnit: mmJEDEC―JEITA―TOSHIBA2-32C1BWeight: 3.9 g (typ.)1R1 R27R1 ≈ 4.5 kΩR2 ≈ 300 Ω6128523104911
