TK6A60D2008-09-161TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)TK6A60DSwitching Regulator Applications• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)• High forward transfer admittance: |Yfs| = 3.0 S (typ.)• Low leakage current: IDSS = 10 μA (VDS = 600 V)• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Absolute Maximum Ratings (Ta = 25°C)CharacteristicsSymbolRatingUnitDrain-source voltageVDSS600VGate-source voltageVGSS±30VDC(Note 1)ID6Drain currentPulse (t= 1 ms)(Note 1)IDP24ADrain power dissipation (Tc= 25°C)PD40WSingle pulse avalanche energy(Note 2)EAS173mJAvalanche currentIAR6ARepetitive avalanche energy (Note 3)EAR4.0mJChannel temperatureTch150°CStorage temperature rangeTstg-55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly evenif the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximumratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor ReliabilityHandbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristicsSymbolMaxUnitThermal resistance, channel to caseRth (ch-c)3.125°C/WThermal resistance, channel to ambientRth (ch-a)62.5°C/WNote 1: Ensure that the channel temperature does not exceed 150℃.Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.4 mH, RG = 25 Ω, IAR = 6 ANote 3: Repetitive rating: pulse width limited by maximum channel temperatureThis transistor is an electrostatic-sensitive device. Handle with care.Unit: mm1: Gate2: Drain3: SourceJEDEC―JEITASC-67TOSHIBA2-10U1BWeight : 1.7 g (typ.)132
