CTS5201Schottky Barrier Diode Silicon EpitaxialCTS520CTS520CTS520CTS520Start of commercial production2012-021.1.1.1. ApplicationsApplicationsApplicationsApplications•High-Speed Switching2.2.2.2. FeaturesFeaturesFeaturesFeatures(1)Low reverse current: IR(2) = 5 µA (max)(2)Small chip scale package: Thickness = 0.40 mm (max)3.3.3.3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitCST21: Cathode2: Anode4.4.4.4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25= 25= 25= 25))))CharacteristicsReverse voltagePeak forward currentAverage rectified currentNon-repetitive peak forward surge currentPower dissipationJunction temperatureStorage temperatureOperating temperatureSymbolVRIFMIOIFSMPDTjTstgToprNote(Note 1)(Note 2)Rating303002001150125-55 to 125-40 to 100UnitVmAAmWNote:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly evenif the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximumratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Note 1: Measured with a 10 ms pulse.Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.2014-02-24Rev.3.0
