BUK7J1R4-40HN-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E5 July 2018Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in an enhanced LFPAK56E package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Features and benefits• Fully automotive qualified to AEC-Q101:• 175 °C rating suitable for thermally demanding environments• Trench 9 Superjunction technology:• Reduced cell pitch enables enhanced power density and efficiency with lower RDSon insame footprint• Improved SOA and avalanche capability compared to standard TrenchMOS• Tight VGS(th) limits enable easy paralleling of MOSFETs• LFPAK Gull Wing leads:• High Board Level Reliability absorbing mechanical stress during thermal cycling, unliketraditional QFN packages• Visual (AOI) soldering inspection, no need for expensive x-ray equipment• Easy solder wetting for good mechanical solder joint• LFPAK copper clip technology:• Improved reliability, with reduced Rth and RDSon• Increases maximum current capability and improved current spreading3. Applications• 12 V automotive systems• Motors, lamps and solenoid control• Start-Stop micro-hybrid applications• Transmission control• Ultra high performance power switching4. Quick reference dataTable 1. Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage25 °C ≤ Tj ≤ 175 °C--40VIDdrain currentVGS = 10 V; Tmb = 25 °C; Fig. 2[1]--190APtottotal power dissipation Tmb = 25 °C; Fig. 1--395W
