BUK6Y19-30P30 V, P-channel Trench MOSFET17 April 2020Product data sheet1. General descriptionP-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device(SMD) plastic package using Trench MOSFET technology.This product has been designed and qualified to AEC-Q101 standard for use in high-performanceautomotive applications such as reverse battery protection.2. Features and benefits• High thermal power dissipation capability• Suitable for thermally demanding environments due to 175 °C rating• Trench MOSFET technology• AEC-Q101 qualified3. Applications• Reverse battery protection• Power management• High-side load switch• Motor drive4. Quick reference dataTable 1. Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage---30VVGSgate-source voltageTj = 25 °C[1]-20-20VIDdrain currentVGS = -10 V; Tmb = 25 °C---45APtottotal power dissipation Tmb = 25 °C--66WStatic characteristicsRDSondrain-source on-stateresistanceVGS = -10 V; ID = -9.5 A; Tj = 25 °C-1519mΩ[1] VGS = -20 V/ 5 V according AEC-Q101 at Tj = 175 °C; VGS = -20 V/ 20 V according AEC-Q101 at Tj = 150 °C
