2SC50652008-12-051TOSHIBA Transistor Silicon NPN Epitaxial Planar Type2SC5065VHF to UHF Band Low Noise Amplifier Applications• Low noise figure, high gain.• NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz)Absolute Maximum Ratings (Ta = 25°C)CharacteristicsSymbolRatingUnitCollector-base voltageVCBO20VCollector-emitter voltageVCEO12VEmitter-base voltageVEBO3VBase currentIB15mACollector currentIC30mACollector power dissipationPC100mWJunction temperatureTj125°CStorage temperature rangeTstg−55 to 125°CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within theabsolute maximum ratings.Please design the appropriate reliability upon reviewing theToshiba Semiconductor Reliability Handbook (“HandlingPrecautions”/“Derating Concept and Methods”) and individualreliability data (i.e. reliability test report and estimated failure rate,etc).Microwave Characteristics (Ta = 25°C)CharacteristicsSymbolTest ConditionMinTyp.MaxUnitTransition frequencyfTVCE = 5 V, IC = 10 mA57⎯GHz⎪S21e⎪2 (1)VCE = 5 V, IC = 10 mA, f = 500 MHz⎯17⎯Insertion gain⎪S21e⎪2 (2)VCE = 5 V, IC = 10 mA, f = 1 GHz8.512⎯dBNF (1)VCE = 5 V, IC = 3 mA, f = 500 MHz⎯1⎯Noise figureNF (2)VCE = 5 V, IC = 3 mA, f = 1 GHz⎯1.12.0dBElectrical Characteristics (Ta = 25°C)CharacteristicsSymbolTest ConditionMinTyp.MaxUnitCollector cut-off currentICBOVCB = 10 V, IE = 0⎯⎯1μAEmitter cut-off currentIEBOVEB = 1 V, IC = 0⎯⎯1μADC current gainhFE(Note 1)VCE = 5 V, IC = 10 mA80⎯240⎯Output capacitanceCob⎯0.7⎯pFReverse transfer capacitanceCreVCB = 5 V, IE = 0, f = 1 MHz(Note 2)⎯0.450.9pFNote 1: hFE classification O: 80 to 160, Y: 120 to 240Note 2: Cre is measured by 3 terminal method with capacitance bridge.Unit: mmJEDEC―JEITASC-70TOSHIBA2-2E1AWeight: 0.006 g (typ.)
