2SA19312006-11-131TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)2SA1931High-Current Switching Applications• Low saturation voltage: VCE (sat) = −0.4 V (max)• High-speed switching time: tstg = 1.0 μs (typ.)• Complementary to 2SC4881Absolute Maximum Ratings (Tc = 25°C)CharacteristicSymbolRatingUnitCollector-base voltageVCBO−60VCollector-emitter voltageVCEO−50VEmitter-base voltageVEBO−7VCollector currentIC−5ABase currentIB−1ATa = 25°C2.0Collector powerdissipationTc = 25°CPC20WJunction temperatureTj150°CStorage temperature rangeTstg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) arewithin the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).Unit: mmJEDEC―JEITASC-67TOSHIBA2-10R1AWeight: 1.7 g (typ.)
