1SS3842007-11-011TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type1SS384Low Voltage High Speed SwitchingSmall packageComposed of 2 independent diodes.Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mAAbsolute Maximum Ratings (Ta = 25°C)CharacteristicSymbolRatingUnitMaximum (peak) reverse VoltageVRM15VReverse voltageVR10VMaximum (peak) forward currentIFM200 *mAAverage forward currentIO100 *mASurge current (10ms)IFSM1 *APower dissipationP100 *mWJunction temperatureTj125°CStorage temperature rangeTstg−55∼125°COperating temperature rangeTopr−40∼100°CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e. operatingtemperature/current/voltage, etc.) are within the absolute maximumratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).*:Unit rating. Total rating = unit rating × 1.5Electrical Characteristics (Ta = 25°C)CharacteristicSymbolTestCircuitTest ConditionMinTyp.MaxUnitVF (1)―IF = 1mA―0.18―VVF (2)―IF = 5mA―0.230.30VForward voltageVF (3)―IF = 100mA―0.350.50VReverse currentIR―VR = 10V――20μATotal capacitanceCT―VR = 0, f = 1MHz―2040pFPin Assignment (Top View)MarkingJEDEC―EIAJ―TOSHIBA1-2U1AWeight: 0.006gUnit: mm
