1SS2942007-11-011TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type1SS294Low Voltage High Speed SwitchingLow forward voltage: VF (3) = 0.54V (typ.)Low reverse surrent: IR = 5μA (max)Small package: SC−59Absolute Maximum Ratings (Ta = 25°C)CharacteristicSymbolRatingUnitMaximum (peak) reverse voltageVRM45VReverse voltageVR40VMaximum (peak) forward currentIFM300mAAverage forward currentIO100mAPower dissipationP150mWJunction temperatureTj125°CStorage temperature rangeTstg−55~125°CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operatingconditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Electrical Characteristics (Ta = 25°C)CharacteristicSymbolTestCircuitTest ConditionMinTyp.MaxUnitVF (1)―IF = 1mA―0.28―VF (2)―IF = 10mA―0.36―Forward voltageVF (3)―IF = 100mA―0.540.60VReverse currentIR―VR = 40V――5μATotal capacitanceCT―VR = 0, f = 1MHz―1825pFMarkingUnit: mmJEDECTO−236MODJEITASC−59TOSHIBA1−3G1BWeight: 0.012g (typ.)
