PSMN1R4-30YLDN-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56using NextPowerS3 Technology30 May 2014Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivershigh efficiency, low spiking performance usually associated with MOSFETs with anintegrated Schottky or Schottky-like diode but without problematic high leakage current.NextPowerS3 is particularly suited to high efficiency applications at high switchingfrequencies.2. Features and benefits• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switchingfrequencies• Superfast switching with soft-recovery; s-factor > 1• Low spiking and ringing for low EMI designs• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at25 °C• Optimised for 4.5 V gate drive• Low parasitic inductance and resistance• High reliability clip bonded and solder die attach Power SO8 package; no glue, nowire bonds, qualified to 175 °C• Wave solderable; exposed leads for optimal visual solder inspection3. Applications• On-board DC-to-DC solutions for server and telecommunications• Secondary-side synchronous rectification in telecommunication applications• Voltage regulator modules (VRM)• Point-of-Load (POL) modules• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components• Brushed and brushless motor control• Power OR-ing4. Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage25 °C ≤ Tj ≤ 175 °C--30VIDdrain currentTmb = 25 °C; VGS = 10 V; Fig. 2[1]--100APtottotal power dissipation Tmb = 25 °C; Fig. 1--166W
