PMXB75UPE20 V, P-channel Trench MOSFET8 July 2014Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits• Trench MOSFET technology• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm• Exposed drain pad for excellent thermal conduction• ElectroStatic Discharge (ESD) protection 1.5 kV HBM• Drain-source on-state resistance RDSon = 69 mΩ• Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V3. Applications• High-side load switch and charging switch for portable devices• Power management in battery driven portables• LED driver• DC-to-DC converter4. Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage---20VVGSgate-source voltageTj = 25 °C-8-8VIDdrain currentVGS = -4.5 V; Tamb = 25 °C[1]---2.9AStatic characteristicsRDSondrain-source on-stateresistanceVGS = -4.5 V; ID = -2.9 A; Tj = 25 °C-6985mΩ[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 6 cm2.
