PMV100XPEA20 V, P-channel Trench MOSFET15 June 2017Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits• Low threshold voltage• Very fast switching• Trench MOSFET technology• ElectroStatic Discharge (ESD) protection > 2 kV HBM• AEC-Q101 qualified3. Applications• Relay driver• High-speed line driver• High-side loadswitch• Switching circuits4. Quick reference dataTable 1. Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage---20VVGSgate-source voltageTj = 25 °C-12-12VIDdrain currentVGS = -4.5 V; Tamb = 25 °C[1]---2.4AStatic characteristicsRDSondrain-source on-stateresistanceVGS = -4.5 V; ID = -2.4 A; Tj = 25 °C-97128mΩ[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
