PMN16XNE20 V, N-channel Trench MOSFET29 January 2016Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits• Trench MOSFET technology• Low threshold voltage• Very fast switching• Enhanced power dissipation capability of 1400 mW• ElectroStatic Discharge (ESD) protection > 1 kV HBM3. Applications• LED driver• Power management• Low-side loadswitch• Switching circuits4. Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage--20VVGSgate-source voltageTj = 25 °C-12-12VIDdrain currentVGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s[1]--9.1AStatic characteristicsRDSondrain-source on-stateresistanceVGS = 4.5 V; ID = 6.9 A; Tj = 25 °C-1519mΩ[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
