PBHV8560Z600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor13 March 2015Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223(SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9560Z2. Features and benefits• Low collector-emitter saturation voltage VCEsat• High collector current capability• High collector current gain hFE at high IC• AEC-Q101 qualified3. Applications• Electronic ballast for fluorescent lighting• LED driver for LED chain module• LCD backlighting• High Intensity Discharge (HID) front lighting• Automotive motor management• Hook switch for wired telecom• Switch Mode Power Supply (SMPS)4. Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnitVCEOcollector-emittervoltageopen base--600VICcollector current--0.5AhFEDC current gainVCE = 10 V; IC = 50 mA; Tamb = 25 °C70135-
