NX7002BKW60 V, single N-channel Trench MOSFET10 December 2015Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits• Logic-level compatible• Very fast switching• Trench MOSFET technology• ElectroStatic Discharge (ESD) protection > 2 kV HBM3. Applications• Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits4. Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-source voltage--60VVGSgate-source voltageTj = 25 °C-20-20VVGS = 10 V; Tsp = 25 °C--330mAIDdrain currentVGS = 10 V; Tamb = 25 °C[1]--240mAStatic characteristicsRDSondrain-source on-stateresistanceVGS = 10 V; ID = 200 mA; Tj = 25 °C-2.22.8Ω[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
