MP40202006-10-271TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type(Fourd Darlington Power tTransistors in One)MP4020High Power Switching ApplicationsHammer Drive, Pulse Motor Drive and Inductive LoadSwitching• Small package by full molding (SIP 10 pins)• High collector power dissipation (4-device operation): PT = 4 W (Ta = 25°C)• High collector current: IC (DC) = 2 A (max)• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)• Zener diode included between collector and baseAbsolute Maximum Ratings (Ta = 25°C)CharacteristicsSymbolRatingUnitCollector-base voltageVCBO50VCollector-emitter voltageVCEO60 ± 10VEmitter-base voltageVEBO8VDCIC2Collector currentPulseICP3AContinuous base currentIB0.5ACollector power dissipation(1 device operation)PC2.0WCollector power dissipation(4 devices operation)PT4.0WJunction temperatureTj150°CStorage temperature rangeTstg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly evenif the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximumratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test reportand estimated failure rate, etc).Array ConfigurationIndustrial ApplicationsUnit: mmJEDEC―JEITA―TOSHIBA2-25A1AWeight: 2.1 g (typ.)21R1 R2910R1 ≈ 5 kΩR2 ≈ 300 Ω835476
