BUK7Y18-55BN-channel TrenchMOS standard level FETRev. 04 — 7 April 2010Product data sheet1.Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.This product has been designed and qualified to the appropriate AEC standard for usein automotive critical applications.1.2 Features and benefitsQ101 compliantSuitable for standard level gate drivesourcesSuitable for thermally demandingenvironments due to 175 °C rating1.3 Applications12 V and 24 V loadsAdvanced braking systems (ABS)Automotive systemsEngine managementGeneral purpose power switchingMotors, lamps and solenoids1.4 Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnitVDSdrain-sourcevoltageTj ≥ 25 °C; Tj ≤ 175 °C--55VIDdrain currentVGS =10V; Tmb =25°C;see Figure 1; see Figure 4--47.4APtottotal powerdissipationTmb = 25 °C; see Figure 2--85WStatic characteristicsRDSondrain-sourceon-stateresistanceVGS =10V; ID =20A;Tj =25°C; see Figure 12;see Figure 13-12.718mΩAvalanche ruggednessEDS(AL)Snon-repetitivedrain-sourceavalanche energyID =47.4 A; Vsup ≤ 55 V;RGS =50 Ω; VGS =10V;Tj(init) = 25 °C; unclamped--77mJDynamic characteristicsQGDgate-drain chargeID =20A; VDS =44 V;VGS = 10 V; see Figure 14-8.1-nC
